 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJ11013 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -90V(Min.) *High DC Current Gain: hFE= 1000(Min.)@IC= -20A *Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A *Complement to Type MJ11014 APPLICATIONS *Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continunous Collector Current-Peak Base Current-Continunous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE -90 -90 -5 -30 -50 -1 200 200 -65~+200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.87 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ11013 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A; IB= 0 -90 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -20A; IB= -0.2A -3.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= -30A; IB= -0.3A -4.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -20A; IB= -0.2A -3.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -30A; IB= -0.3A VCE=-90V; RBE=1k VCE=-90V; RBE=1k; TC=150 VCE= -50V; IB= 0 -5.0 -1.0 -5.0 -1.0 V ICER Collector Cutoff Current mA ICEO Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5.0 mA hFE-1 DC Current Gain IC= -20A, VCE= -5V 1000 hFE-2 DC Current Gain IC= -30A, VCE= -5V 200 isc Websitewww.iscsemi.cn |
Price & Availability of MJ11013
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |